Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density
نویسندگان
چکیده
منابع مشابه
Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers.
In this work, we demonstrate ultra-low-threshold, optically pumped, room-temperature lasing in GaN microdisk and micro-ring cavities containing InGaN quantum dots and fragmented quantum wells, with the lowest measured threshold at a record low of 6.2 μJ/cm2. When pump volume decreases, we observe a systematic decrease in the lasing threshold of micro-rings. The photon loss rate, γ, increases w...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2021
ISSN: 1556-276X
DOI: 10.1186/s11671-021-03557-4